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机译:石墨烯表面触点锡二硫化锡晶体管,用于切换性能提高和接触阻力
Hanyang Univ Inst Nano Sci &
Technol Wangshimni Ro 222 Seoul 04763 South Korea;
Hanyang Univ Dept Elect Wangshimni Ro 222 Seoul 04763 South Korea;
Hanyang Univ Dept Elect Wangshimni Ro 222 Seoul 04763 South Korea;
Hanyang Univ Dept Elect Wangshimni Ro 222 Seoul 04763 South Korea;
Hanyang Univ Dept Elect Wangshimni Ro 222 Seoul 04763 South Korea;
Hanyang Univ Dept Elect Wangshimni Ro 222 Seoul 04763 South Korea;
Hanyang Univ Dept Elect Wangshimni Ro 222 Seoul 04763 South Korea;
Hanyang Univ Dept Elect Wangshimni Ro 222 Seoul 04763 South Korea;
Hanyang Univ Dept Elect Wangshimni Ro 222 Seoul 04763 South Korea;
Hanyang Univ Dept Elect Wangshimni Ro 222 Seoul 04763 South Korea;
Hanyang Univ Inst Nano Sci &
Technol Wangshimni Ro 222 Seoul 04763 South Korea;
transistor; graphene; transition metal dichalcogenide; tin disulfide; nanoelectronic;
机译:石墨烯表面触点锡二硫化锡晶体管,用于切换性能提高和接触阻力
机译:电触点的巨大可调性和通过不可忽略的正常电场强度或基于2D Bx /石墨烯(X = P,AS)Van der Wa van Der Wa versobilayer
机译:接触电阻对石墨烯场效应晶体管性能通过分析研究的影响
机译:开关操作和表面观察镀锡触点的接触电阻特性
机译:朝向低温固体源合成单层钼二硫化物和低电阻触点到二硫化二硫化钼的装置
机译:顶部栅极石墨烯场效应晶体管中金属石墨烯触点的栅极控制肖特基势垒降低的物理模型
机译:接触电阻对石墨烯场效应晶体管性能的影响通过分析研究
机译:接触电阻以及材料和工艺变量对开关装置中接触电阻和接触可靠性的影响