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首页> 外文期刊>Nano letters >Fabry-Perot Cavity-Enhanced Optical Absorption in Ultrasensitive Tunable Photodiodes Based on Hybrid 2D Materials
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Fabry-Perot Cavity-Enhanced Optical Absorption in Ultrasensitive Tunable Photodiodes Based on Hybrid 2D Materials

机译:基于杂交2D材料的超敏感可调光电二极管中的法布里 - 珀罗腔增强光学吸收

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摘要

Monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) show interesting optical and electrical properties because of their direct bandgap. However, the low absorption of atomically thin TMDs limits their applications. Here, we report enhanced absorption and optoelectronic properties of monolayer molybdenum disulfide (MoS2) by using an asymmetric Fabry-Perot cavity. The cavity is based on a hybrid structure of MoS2/hexagonal boron nitride (BN)/Au/SiO2 realized through layer-by-layer vertical stacking. Photoluminescence (PL) intensity of monolayer MoS2 is enhanced over 2 orders of magnitude. Theoretical calculations show that the strong absorption of MoS2 comes from photonic localization on the top of the microcavity at optimal BN spacer thickness. The n/n(+) MoS2 homojunction photodiode incorporating this asymmetric Fabry-Perot cavity exhibits excellent current rectifying behavior with an ideality factor of 1 and an ultrasensitive and gate-tunable external photo gain and specific detectivity. Our work offers an effective method to achieve uniform enhanced light absorption by monolayer TMDs, which has promising applications for highly sensitive optoelectronic devices.
机译:单层二维(2D)过渡金属二甲硅藻(TMDS)显示出有趣的光学和电气性能,因为它们的直接带隙。然而,原子薄TMDS的低吸收限制了它们的应用。这里,我们通过使用不对称的法布里 - 珀罗腔来报告单层钼二硫化物(MOS2)的增强的吸收和光电性能。腔基于通过层型垂直堆叠实现的MOS2 /六边形氮化硼(BN)/ AU / SiO2的混合结构。单层MOS2的光致发光(PL)强度增强超过2个峰值。理论计算表明,MOS2的强吸收来自微腔顶部的光子定位,在最佳的BN间隔厚度下。结合该不对称法布里 - 珀罗腔的N / N(+)MOS2同性全调光电二极管具有优异的电流整流行为,其理想因子为1和超声和栅极可调的外部照片增益和特定探测。我们的作品提供了一种有效的方法,实现了单层TMDS的均匀增强光吸收,这对高敏感的光电器件具有有前途的应用。

著录项

  • 来源
    《Nano letters》 |2017年第12期|共6页
  • 作者单位

    Natl Univ Singapore Dept Phys 2 Sci Dr 3 Singapore 117542 Singapore;

    Shenzhen Univ Key Lab Optoelect Devices &

    Syst SZU NUS Collaborat Innovat Ctr Optoelect Sci &

    Te Coll Optoelect Engn Minist Educ &

    Guangdong Prov Shenzhen 518060 Peoples R China;

    Natl Univ Singapore Dept Phys 2 Sci Dr 3 Singapore 117542 Singapore;

    Natl Univ Singapore Dept Phys 2 Sci Dr 3 Singapore 117542 Singapore;

    Natl Univ Singapore Dept Phys 2 Sci Dr 3 Singapore 117542 Singapore;

    Natl Univ Singapore Dept Phys 2 Sci Dr 3 Singapore 117542 Singapore;

    Natl Univ Singapore Dept Phys 2 Sci Dr 3 Singapore 117542 Singapore;

    Shenzhen Univ Key Lab Optoelect Devices &

    Syst SZU NUS Collaborat Innovat Ctr Optoelect Sci &

    Te Coll Optoelect Engn Minist Educ &

    Guangdong Prov Shenzhen 518060 Peoples R China;

    Shenzhen Univ Key Lab Optoelect Devices &

    Syst SZU NUS Collaborat Innovat Ctr Optoelect Sci &

    Te Coll Optoelect Engn Minist Educ &

    Guangdong Prov Shenzhen 518060 Peoples R China;

    Natl Univ Singapore Dept Phys 2 Sci Dr 3 Singapore 117542 Singapore;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;物理化学(理论化学)、化学物理学;
  • 关键词

    Transition metal dichalcogenides (TMDs); MoS2; BN; Fabry-Perot cavity; absorption; photodiode;

    机译:过渡金属二甲硅藻(TMDS);MOS2;BN;法布里 - 珀罗腔;吸收;光电二极管;

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