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机译:通过压电反力效应同时增强GaN微针的紫外线发光二极管的发光和抑制效率下垂
Georgia Inst Technol Sch Mat Sci &
Engn Atlanta GA 30332 USA;
Georgia Inst Technol Sch Mat Sci &
Engn Atlanta GA 30332 USA;
Georgia Inst Technol Sch Mat Sci &
Engn Atlanta GA 30332 USA;
Georgia Inst Technol Sch Mat Sci &
Engn Atlanta GA 30332 USA;
Georgia Inst Technol Sch Mat Sci &
Engn Atlanta GA 30332 USA;
Georgia Inst Technol Sch Mat Sci &
Engn Atlanta GA 30332 USA;
Georgia Inst Technol Sch Mat Sci &
Engn Atlanta GA 30332 USA;
South China Normal Univ Inst Optoelect Mat &
Technol Lab Nanophoton Funct Mat &
Devices Guangzhou 510631 Guangdong Peoples R China;
Georgia Inst Technol Sch Mat Sci &
Engn Atlanta GA 30332 USA;
Piezo-phototronic effect; light emission; efficiency droop; GaN; UV LED;
机译:通过压电反力效应同时增强GaN微针的紫外线发光二极管的发光和抑制效率下垂
机译:压电光电效应大大提高了ZnO纳米线/ p-聚合物杂化无机/有机紫外发光二极管的效率
机译:通过Al组成渐变的AlGaN / GaN超晶格电子阻挡层提高了基于GaInN的发光二极管的整体效率,并降低了效率下降
机译:铝涂层选择性区域生长的GaN条纹提高了深紫外发光二极管的光提取效率
机译:GaN基发光二极管上的光学功能结构,用于提高光提取效率和控制发射模式。
机译:具有高镁掺杂效率的特别设计的超晶格p型电子阻挡层的几乎无效率下降的基于AlGaN的紫外线发光二极管
机译:通过压电反力效应同时增强GaN微针的紫外线发光二极管的发光和抑制效率下垂