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机译:<![CDATA [拓扑相变,纳米级不均匀性(BI 1- x i> sub>在 x sum> sub>) 2 sub> se 3 sub>]>
Department of Physics and Astronomy Rutgers University Piscataway New Jersey 08854 United States;
College of Physics and Information Science Hunan Normal University Changsha Hunan 410081 China;
Department of Physics and Astronomy Rutgers University Piscataway New Jersey 08854 United States;
Department of Physics and Astronomy Rutgers University Piscataway New Jersey 08854 United States;
Key Laboratory of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China;
Department of Physics and Astronomy Rutgers University Piscataway New Jersey 08854 United States;
Department of Physics and Astronomy Rutgers University Piscataway New Jersey 08854 United States;
first-principles calculation; In defects; nanoscale inhomogeneity; STM; Topological phase transition;
机译:<![CDATA [拓扑相变,纳米级不均匀性(BI 1- x i> sub>在 x sum> sub>) 2 sub> se 3 sub>]>
机译:表面准一维系统相变中In / Si(111)的纳米尺度不均匀性和涨落的真实空间观察
机译:半氢化Bi蜂窝单层中的谷极化量子异常霍尔相和可调拓扑相变
机译:使用(Bi1-xInx)2Se3中的拓扑相变超快光学控制等离子-声子相互作用
机译:铁电氧化物异质结构中拓扑结构和拓扑相转变的相场模拟
机译:拓扑阶段转变:泰赫兹驱动的单层过渡金属二甲基甲基甲基甲基甲基化物的可逆拓扑相转变(ADV。12/2021)
机译:拓扑阶段过渡(Bi1-xinx)2se3中纳米级不均匀性