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首页> 外文期刊>Nano letters >Electron and Hole g-Factors and Spin Dynamics of Negatively Charged Excitons in CdSe/CdS Colloidal Nanoplatelets with Thick Shells
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Electron and Hole g-Factors and Spin Dynamics of Negatively Charged Excitons in CdSe/CdS Colloidal Nanoplatelets with Thick Shells

机译:电子和孔 g 带有厚壳的CDSE / CDS胶体纳米孔中带负电荷激子的旋转动力学

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We address spin properties and spin dynamics of carriers and charged excitons in CdSe/CdS colloidal nanoplatelets with thick shells. Magneto-optical studies are performed by time-resolved and polarization-resolved photoluminescence, spin-flip Raman scattering and picosecond pump–probe Faraday rotation in magnetic fields up to 30 T. We show that at low temperatures the nanoplatelets are negatively charged so that their photoluminescence is dominated by radiative recombination of negatively charged excitons (trions). Electron g -factor of 1.68 is measured, and heavy-hole g -factor varying with increasing magnetic field from ?0.4 to ?0.7 is evaluated. Hole g -factors for two-dimensional structures are calculated for various hole confining potentials for cubic- and wurtzite lattice in CdSe core. These calculations are extended for various quantum dots and nanoplatelets based on II–VI semiconductors. We developed a magneto-optical technique for the quantitative evaluation of the nanoplatelets orientation in ensemble.
机译:我们在具有厚壳的CDSE / CDS胶体纳米孔中旋转旋转性和旋转动力学和带电激子的旋转性能和带电激子。通过时间分辨和偏振分辨的光致发光,旋转翻转拉曼散射和PicoSecond泵探针法拉第旋转的磁光研究磁场高达30吨。我们表明,在低温下,纳米孔的负荷带负电以使其负荷光致发光通过带负电激子(枝)的辐射重组来支配。测量1.68的电子G-物质,评价磁场从ω0.7的磁场增加磁场的重孔G-Factor。用于二维结构的孔G -Factors针对CDSE芯中的立方和纯度晶格的各种空穴限制电位计算。基于II-VI半导体的各种量子点和纳米孔延伸,这些计算延伸。我们开发了一种磁光学技术,用于在集合中进行纳米孔的定量评价。

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