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Adoption of Hybrid Dicing Technique to Minimize Sawing-Induced Damage during Semiconductor Wafer Separation

机译:采用混合切割技术,以最小化半导体晶片分离期间的锯切诱导损伤

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This article demonstrates that the chipping damage resulting from silicon wafer separation can be more effectively suppressed by the adoption of hybrid dicing ( a duel process that uses laser ablation prior to mechanical sawing) than single dicing, such as sawing. This work shows that the adoption of the hybrid dicing technique induces sacrificial fracture at the laser-induced groove tip to save the regions outside of the groove formed along the scribe region of the wafer. Particularly, this study details how a pre-existing groove (i.e., a laser-induced groove) on the front surface of the wafer interacts with the saw blade penetration-induced trench during the second step of the hybrid dicing process. According to the experimental results, the magnitude of the chipping damage in the chips diced from a wafer including a laser-induced groove with a larger aspect ratio was more effectively reduced at a more rapid sawing velocity. However, since a laser-induced groove with a larger aspect ratio could also have a bigger curvature in its tip, adopting a groove with the optimum shape was necessary for effective prevention of dicing-induced damage during hybrid dicing.
机译:本文表明,通过采用混合切割(在机械锯前使用激光烧蚀之前使用激光烧蚀),可以更有效地抑制由硅晶片分离产生的碎裂损坏而不是单切割,例如锯切。该工作表明,通过混合切割技术的采用在激光诱导的槽尖处诱导牺牲断裂,以将沿晶片的划线区域形成的凹槽外部的区域。特别是,该研究详细描述了在晶片的前表面上的预先存在的凹槽(即激光感应的凹槽)在混合切割过程的第二步骤期间与锯片穿透引起的沟槽相互作用。根据实验结果,在更快速的锯切速度下更有效地减小了包括具有较大纵横比的晶片中切片的芯片中切削碎片的碎裂的大小。然而,由于具有较大纵横比的激光诱导的凹槽在其尖端中也具有更大的曲率,因此采用具有最佳形状的凹槽,以便有效预防混合在杂交切割期间的损伤。

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