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Enhanced Thermoelectric Properties of Ga and Ce Double-Filled p-Type Skutterudites

机译:GA和Ce双填充P型Skuttudites的热电性能增强

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Among the p-type filled skutterudites, Ce single-filled (Co,Fe)Sb-3 is known as a promising thermoelectric material. Here, we try to enhance the thermoelectric properties of Ce-filled (Co,Fe)Sb-3 by co-filling of Ga. We synthesize the samples in the nominal compositions GaxCeFe3.5Co0.5Sb12-x/3 (x = 0.06, 0.09, 0.15, and 0.21) and examined their thermoelectric properties from room temperature to 773 K. It is confirmed that Ga can occupy not only the void site but also the Sb site, i.e., the chemical formula can be expressed as (Ga-VF)(2x/3)CeFe3.5Co0.5Sb12-x/3(Ga-Sb)(x/3), where Ga-VF and Ga-Sb mean Ga in the void and Sb sites, respectively. Ga contributes to optimize the carrier concentration as well as to reduce the lattice thermal conductivity. Owing to these Ga contributions, the material's thermoelectric figure of merit zT is enhanced and reaches 0.85 in maximum at 773 K, which is obtained for the sample with x = 0.15.
机译:在P型填充斯皮特里德中,CE单填充(CO,Fe)SB-3称为有希望的热电材料。 在这里,我们尝试通过共填充Ga来提高Ce填充(Co,Fe)Sb-3的热电性能。我们在标称组合物中合成样品Gaxcefe3.5Co0.5SB12-X / 3(x = 0.06, 0.09,0.15和0.21)并将其热电性能从室温达到773k。它确认不仅可以占据空隙位点,而且可以表达化学式(GA-VF) )(2x / 3)Cefe3.5Co0.5SB12-X / 3(Ga-Sb)(X / 3),其中Ga-Vf和Ga-Sb分别在空隙和Sb位点中平均Ga。 GA有助于优化载体浓度,并降低晶格导热率。 由于这些GA贡献,材料的优异ZT的热电值增强,最大值为773 k,其达到0.85,其具有X = 0.15的样品。

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