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首页> 外文期刊>Electrochimica Acta >Size matching effect between anion vacancies and halide ions in passive film breakdown on copper
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Size matching effect between anion vacancies and halide ions in passive film breakdown on copper

机译:铜上无源薄膜击穿中的阴离子空位和卤离子之间的尺寸匹配效果

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Different types of anion vacancies were optimized in passive films on copper via first-principles calculations based on density functional theory, and numerous potentiodynamic polarizations were performed to evaluate the size matching effect between anion vacancies and halide ions in passive film breakdown on copper. The size of the anion vacancies decreased to some extent compared with the corresponding atom due to the surface relaxation effect, and electrochemical experiments showed that the pitting potential for an oxide passive film on copper followed the order F??
机译:不同类型的阴离子空位的在通过第一原理计算上铜钝化膜基于密度泛函理论进行了优化,并进行了许多电位极化,以评估在对铜钝化膜击穿阴离子空位和卤化物离子之间的尺寸匹配的效果。阴离子空位的尺寸减小到与相应的原子比在一定程度上由于表面缓和效果,和电化学实验表明,在铜上的氧化物钝化膜的点蚀电位,其后的顺序F 14 <?氯?? <? BR ?,而该顺序为:Cl ?? <6 F 14 <?BR吗?硫化物的钝化膜,这是由于阴离子空位扩张的能量和脱水的吉布斯能的综合效果。孔蚀电位命令是关于硫化预预氧化或铜相同的与在相同溶液新鲜铜。同时,碘离子没有相比由于难溶铜碘化物的形成。凹坑深度对铜坑口直径的比值随坑体积减少,导致浅坑与大口;因此,催化遮挡细胞效应不是铜明显。

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