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首页> 外文期刊>Electrochimica Acta >In-situ chemical polymerization of Cu-Polythiophenes composite film as seed layer for direct electroplating on insulating substrate
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In-situ chemical polymerization of Cu-Polythiophenes composite film as seed layer for direct electroplating on insulating substrate

机译:用于直接电镀在绝缘基板上的Cu-聚噻吩复合膜的原位化学聚合

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摘要

Metal particles are embedded in the polymer to form a polymer composite film as a seed layer on an insulating substrate to overcome the limitation that electrodeposited copper only occurring at the interface between the polymer and the metal electrode. In this work, we successfully developed a Cu-polythiophenes composite film (Cu-PT composite film) through a facile in-situ reduction method, obtaining porous-networked PT containing homogeneously distributed Cu. the Cu-PT composite film serve as a feasible seed layer for subsequent metallization on the insulating substrate. The deposition conditions for the optimized migration rate of copper during the electroplating process of the composite film were obtained by multiple groups of single factor experiments. Notably, electroplated textile fabrics with the Cu-PT composite film demonstrate a wide stretch-resistant working range (0-50% applied strain) maintaining stable conductivity. (C) 2019 Elsevier Ltd. All rights reserved.
机译:金属颗粒嵌入聚合物中以在绝缘基板上形成聚合物复合膜,以克服仅在聚合物和金属电极之间的界面处发生电沉积铜的限制。 在这项工作中,我们通过容易原位还原方法成功地开发了Cu-聚噻吩复合膜(Cu-Pt复合膜),获得了均匀分布Cu的多孔网络PT。 Cu-Pt复合膜用作可行的种子层,用于在绝缘基板上进行金属化。 通过多个单因素实验获得在复合膜的电镀过程中铜的优化迁移率的沉积条件。 值得注意的是,具有Cu-Pt复合膜的电镀纺织织物表明了保持稳定的导电性的宽拉伸工作范围(0-50%的施加菌株)。 (c)2019 Elsevier Ltd.保留所有权利。

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