Second harmonic generation in N-doped H: SiO_2 films by poling under x-ray irradiation

摘要

Second harmonic generation was observed in N-doped H: SiO_2 films after poling under x-ray irradiation from a synchrotron at room temperature. The measurements of the photocurrent confirmed that the vitreous films have been poled. The magnitude of the induced second-order nonlinear coefficients measured from the Maker fringe is in the order of 0.001 pmV~(-1). This provides direct evidence that poling under x-ray irradiation is achievable at room temperature in amorphous materials.