Flexible resistive switching memory based on Mn _(0.20)Zn _(0.80)O/HfO _2 bilayer structure

摘要

We have investigated Mn _(0.20)Zn _(0.80)O/HfO _2 bilayer structure resistance memory fabricated on flexible Kapton substrates. The Mn _(0.20)Zn _(0.80)O/HfO _2 bilayer structure shows a steady and bipolar resistive switching characteristic with an on/off ratio of ～70 at 0.5 V. Through the bending investigation, our flexible memory exhibits no degradation in switching property, even when the substrate is bent up to 11 mm radius. The resistive switching mechanism of the Mn _(0.20)Zn _(0.80)O/HfO _2 bilayer structure can be attributed to the control of oxygen vacancies in HfO _2 through the forward or reverse bias.