首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Plasmonically enhanced quantum-dot white-light InGaN light-emitting diode
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Plasmonically enhanced quantum-dot white-light InGaN light-emitting diode

机译:等离子增强量子点白光InGaN发光二极管

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摘要

The enhancement of white light emission from quantum-dot-coated InGaN light-emitting diodes (LEDs) via localized surface plasmon (LSP) resonance of metallic nanoparticles (MNPs) is investigated and demonstrated. With liquid-immersion laser ablation of metals, MNPs with a broad range of dimensions were synthesized in a single process. Since the LSP resonant wavelength depends strongly on the dimensions of MNPs, enhancement over a wide range of wavelengths in the visible spectrum is expected. MNPs of Ag, Au, Cu, Ni and Ti were experimented on. It is found that all MNPs result in an increase in the luminous flux and luminous efficacy of the quantum-dot-coated LEDs, with Ag NPs having the strongest effect (17.9%) amongst all metals tested. This observation is explained in terms of the resonance of the polarizability of the MNPs.
机译:研究并证明了通过量子点涂覆的InGaN发光二极管(LED)通过金属纳米颗粒(MNP)的局部表面等离子体激元(LSP)共振增强了白光发射。通过对金属进行液浸激光烧蚀,可以在单个过程中合成尺寸范围广泛的MNP。由于LSP的共振波长在很大程度上取决于MNP的尺寸,因此可望在可见光谱的宽范围波长上得到增强。对Ag,Au,Cu,Ni和Ti的MNP进行了实验。发现所有MNP都会导致量子点涂层LED的光通量和发光效率增加,其中Ag NP在所有测试的金属中具有最强的作用(17.9%)。根据MNP极化性的共振来解释该观察结果。

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