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首页> 外文期刊>Journal of Nuclear Materials: Materials Aspects of Fission and Fusion >Dislocation-mediated trapping of deuterium in tungsten under high-flux high-temperature exposures
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Dislocation-mediated trapping of deuterium in tungsten under high-flux high-temperature exposures

机译:高通量高温暴露下钨中氘的位错介导俘获

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摘要

The effect of severe plastic deformation on the deuterium retention in tungsten exposed to high-flux low-energy plasma (flux similar to 10(24) m(-2) s(-1), energy similar to 50 eV and fluence up to 5 x 10(25) D/m(2)) was studied experimentally in a wide temperature range (460-1000 K) relevant for application in ITER. The desorption spectra in both reference and plastically-deformed samples were deconvoluted into three contributions associated with the detrapping from dislocations, deuterium-vacancy clusters and pores. As the exposure temperature increases, the positions of the release peaks in the plastically-deformed material remain in the same temperature range but the peak amplitudes are altered as compared to the reference material. The desorption peak attributed to the release from pores (i.e. cavities and bubbles) was suppressed in the plastically deformed samples for the low-temperature exposures, but became dominant for exposures above 700 K. The observed strong modulation of the deuterium storage in "shallow" and "deep" traps, as well as the reduction of the integral retention above 700 K, suggest that the dislocation network changes its role from "trapping sites" to "diffusion channels" above a certain temperature. The major experimental observations of the present work are in line with recent computational assessment based on atomistic and mean field theory calculations available in literature. (C) 2016 Elsevier B.V. All rights reserved.
机译:严重塑性变形对暴露于高通量低能等离子体(通量类似于10(24)m(-2)s(-1),能量类似于50 eV和通量高达5的钨)中的氘保留的影响在适用于ITER的较宽温度范围(460-1000 K)中,通过实验研究了x 10(25)D / m(2))。将参考样品和塑性变形样品中的解吸光谱解卷积为与位错,氘-空位簇和孔的脱陷相关的三个贡献。随着曝光温度的升高,塑性变形材料中释放峰的位置保持在相同的温度范围内,但与参考材料相比,峰幅度发生了变化。对于低温暴露,在塑性变形样品中,归因于从孔(即,空腔和气泡)释放的解吸峰受到抑制,但对于700 K以上的暴露,解吸峰变得占主导。观察到的“浅”氘存储的强调制和“深”阱,以及在700 K以上时积分滞留量的减少,都表明位错网络在一定温度以上的作用从“阱位”变为“扩散通道”。当前工作的主要实验观察结果与最近基于文献中可用的原子论和平均场论计算的计算评估相一致。 (C)2016 Elsevier B.V.保留所有权利。

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