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Helium solubility and bubble formation in a nanostructured ferritic alloy

机译:纳米结构铁素体合金中的氦溶解度和气泡形成

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The response of a nanostructured ferritic alloy to He implantation and post-irradiation annealing (PIA) at 750 ℃ was characterized by atom probe tomography and transmission electron microscopy. The supersaturated He concentration in the ferrite at a dose of ~2.1 displacements per atom was similar for the as-implanted, 75 ± 7 appm, and a 10 h PIA treatment, 71 ± 7 appm, but decreased to 38 ± 2 appm after a 100 h PIA treatment. Approximately 91-97% of the He bubbles were present as isolated bubbles in the ferrite and ~1-5% on the surface of the nanoclusters in the ferrite. The remainder were associated with the grain boundaries with a small fraction on the surface of Ti(N,C,O) precipitates. Their average size and number density were similar for the as-implanted and 10 h PIA treatment with a small increase in the size and a significant increase in the number density after the 100 h PIA treatment. Swelling in the high dose region increased from ~1% in the as-implanted and 10 h PIA conditions to ~5% after the 100 h PIA treatment but the estimated number of He atoms per unit volume in the He bubbles decreased by an order of magnitude. Number densities increased from ~8 ×10~(23) m~(-3) in the as-implanted to ~15 ×10~(23) m~(-3) in the 10 h PIA condition, with little change (to ~12 ×10~(23) m~(-3)) in the 100 h PIA condition. This trend may indicate nucleation of new bubbles up to 10 h, with growth and possible consumption of the smaller bubbles between 10 and 100 h.
机译:通过原子探针层析成像和透射电子显微镜表征了纳米结构的铁素体合金对750℃He注入和辐照后退火(PIA)的响应。在每个原子〜2.1位移的剂量下,铁素体中的过饱和He浓度与植入时的75±7 appm和10 h PIA处理相似,为71±7 appm,但在注入后降低至38±2 appm。 PIA治疗100小时。大约91-97%的He气泡以孤立的气泡形式存在于铁氧体中,约1-5%的He气泡以铁氧体形式存在于纳米团簇的表面。其余部分与Ti(N,C,O)沉淀物表面上的一小部分与晶界有关。植入后和10 h PIA处理的平均尺寸和数量密度相似,但100 h PIA处理后尺寸的增加很小,数量密度显着增加。高剂量区域中的溶胀从植入时和10 h PIA条件下的〜1%增加到100 h PIA处理后的〜5%,但估计的每单位体积He气泡中He原子的数量减少了约一个数量级。大小。数密度从植入时的〜8×10〜(23)m〜(-3)增加到10 h PIA条件下的〜15×10〜(23)m〜(-3),变化很小(至在100 h PIA条件下为〜12×10〜(23)m〜(-3))。这种趋势可能表明新气泡的成核时间长达10小时,而小气泡的生长和可能的消耗则介于10到100小时之间。

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