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首页> 外文期刊>Journal of Molecular Structure >Practical crystal engineering using halogen bonding: A hierarchy based on calculated molecular electrostatic potential surfaces
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Practical crystal engineering using halogen bonding: A hierarchy based on calculated molecular electrostatic potential surfaces

机译:使用卤素键的实用晶体工程:基于计算出的分子静电势面的层次结构

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A series of co-crystallization experiments were performed using four multi-topic N-heterocyclic acceptor molecules and nine aromatic halogen-bond donors in order to establish how effectively a ranking of bond strength based on calculated molecular electrostatic potential surfaces translates into predictable primary interactions in the solid state. A total of ten new crystal structures were obtained, and in each case, the observed interaction took place between the best acceptor (with the larger negative electrostatic potential) on the N-heterocycle and the halogen-bond donor. The supramolecular yield (number of successful co-crystallizations) is 70% for iodine-donors whereas none of the bromo-substituted donors produced a co-crystal which underscores the importance of the magnitude of the electrostatic potential and of the polarizability of the halogen-bond donor in the context of successful practical crystal engineering.
机译:为了确定基于计算的分子静电势表面的键强度排名如何有效地转化为可预测的主要相互作用,使用四个多主题N杂环受体分子和九个芳族卤素键供体进行了一系列共结晶实验。固态。总共获得了十个新的晶体结构,并且在每种情况下,观察到的相互作用都发生在N杂环上的最佳受体(负静电势较大)与卤素键供体之间。碘供体的超分子产率(成功的共结晶次数)为70%,而没有一个溴取代的供体产生了一个共晶,该共晶强调了静电势的大小和卤素分子极化率的重要性。成功的实用晶体工程中的键供体。

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