Microstructures, phases, and properties of low melting BaO-B _2O_3-ZnO glass films prepared by pulsed laser deposition

摘要

With the motivation to employ BaO-B_2O_3-ZnO for high performance capacitors by using viscous flow/liquid phase sintering, the microstructures, phases, and dielectric properties of BaO-B_2O _3-ZnO films prepared by pulsed laser deposition were examined as a function of heat-treatment. The glass transition temperature (Tg) and crystallization temperature of the films are ~ 536 C and 640 C, respectively. The phases in the films are quite complicated after heat-treated above 700 C until 900 C where the film is dominated by a single phase. Zn concentration is reduced after heat-treatment at high temperature due to segregation and evaporation. The dielectric constant of the film decreases with the increasing heat-treatment temperature, probably due to Zn reduction, Si diffusion, and crystallization of the film. Experimental data shows that ~ 700 C is the optimal temperature to use the low melting glass BaO-B_2O_3-ZnO to make high performance capacitors by viscous flow/liquid phase sintering.