Luminescence decay in hydrogenated amorphous silicon and silicon nanostructures

摘要

The stretched exponential luminescence decay observed at temperatures lower than 20 K transits to the power law decay due to the electron-hopping at localized band tail states near 60 K in the hydrogenated amorphous silicon (a-Si:H). The luminescence decay at 4.2 K in a-Si:H is quite similar to that of Si-nanoparticles in the porous Si (p-Si). It is explained from the comparison with p-Si that the slow luminescence of the life time of ～ 1 ms is due to the recombination of excitonic electron-hole pairs at the spin triplet state quantum-confined in the hydrogen-free Si nanostructure in a-Si:H. The fast luminescence of the life time of ～ 1 μs is due to the recombination of the pairs at the spin-singlet state and the life time is explained as due to the indirect optical transition.