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Thin-walled B-C-N ternary microtubes: from synthesis to electrical, cathodoluminescence and field-emission properties

机译:薄壁B-C-N三元微管:从合成到电学,阴极发光和场发射特性

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摘要

Microtubes with nanoscale sidewalls, benefiting from their large internal space, can find wide potential applications in microreactors, microiluidic devices, drug delivery systems, etc. We report on the synthesis of thin-walled B-C-N ternary microtubes based on a modified vapor-liquid-solid (VLS) and template self-sacrificing process. The BCN microtubes have unique structures with diameters in the microscale range and wall-thicknesses in the nanoscale range. In situ electrical measurements indicate that the BCN microtubes have a semiconducting behavior with enhanced conductivity. The electrical properties of the microtubes can be tailored by successful C doping. A strong broad UV band is observed from the microtubes, which can be assigned to the impurity and/or defect-related emission (IDRE). Field-emission measurements show that after C doping, the resultant BCN microtubes have greatly improved field-emission characteristics compared with pure BN microtubes.
机译:具有纳米级侧壁的微管,得益于其较大的内部空间,可以在微反应器,微流体装置,药物输送系统等中找到广泛的潜在应用。我们报道了基于改良的气液固相的薄壁BCN三元微管的合成(VLS)和模板自我牺牲过程。 BCN微管具有独特的结构,其直径在微米范围内,壁厚在纳米范围内。原位电学测量表明BCN微管具有提高导电性的半导体性能。可以通过成功的C掺杂来定制微管的电性能。从微管中观察到很强的宽UV带,可以将其分配给杂质和/或缺陷相关发射(IDRE)。场发射测量结果表明,掺C后,与纯BN微管相比,所得的BCN微管具有大大改善的场发射特性。

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