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Side chain engineering of fused aromatic thienopyrazine based low band-gap polymers for enhanced charge carrier mobility

机译:基于稠合芳族噻吩并恶嗪的低带隙聚合物的侧链工程设计,可提高载流子迁移率

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摘要

A strategic side-chain engineering approach leads to the two orders of magnitude enhancement of charge carrier mobility in phenanthrene based fused aromatic thienopyrazine polymers. Hole carrier mobility up to 0.012 cm~2/Vs can be obtained in thin film transistor devices. Polymers were also utilized to fabricate bulk heterojunction photovoltaic devices and the maximum PCE obtained in these OPV's was 1.15%. Most importantly, performances of the devices were correlated with thin morphological analysis performed by atomic force microscopy and grazing incidence X-ray scattering.
机译:战略性的侧链工程方法可导致基于菲的稠合芳族噻吩并吡嗪聚合物中载流子迁移率提高两个数量级。在薄膜晶体管器件中,空穴载流子迁移率可达到0.012 cm〜2 / Vs。聚合物还用于制造体异质结光伏器件,在这些OPV中获得的最大PCE为1.15%。最重要的是,该设备的性能与通过原子力显微镜和掠入射X射线散射进行的薄形态分析相关。

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