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Ligands affect the crystal structure and photovoltaic performance of thin films of PbSe quantum dots

机译:配体影响PbSe量子点薄膜的晶体结构和光伏性能

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摘要

We have prepared thin films of PbSe quantum dots (QDs) featuring three different ligands, oleic acid (OA), butylamine (BA), and 1,2-ethanedithiol (EDT), which have pronounced affects on the arrangement and photovoltaic performance of the PbSe QDs in the thin films. Transmission electron microscopy revealed that ligands that altered the inter-QD spacing induced significant changes in the packing of the PbSe QDs in localized regions of small areas (300 x 300 nm) of the thin films: from a superlattice of OA-capped PbSe QDs to a chaotic pattern of EDT-capped PbSe QDs. Using a synchrotron X-ray reflectivity probe and data fitting, we determined that the roughness decreased and the average densities increased for large-area (1.5 x 1.5 cm) PbSe QD thin films capped with BA and EDT, relative to those of the OA-capped PbSe QD film. In particular, the PbSe QDs' vertical packing density, which is critical for charge transport, increased substantially for the system incorporating EDT ligands. As a result, devices containing the EDT-treated PbSe QD film as the active layer displayed much improved power conversion efficiencies (PCEs) relative to those of corresponding devices featuring either the OA- or BA-capped PbSe QD films as active layers. Adopting a layer-by-layer technique, we fabricated a EDT-capped PbSe QD device that exhibited a PCE of 2.45%.
机译:我们已经准备了具有三种不同配体的PbSe量子点(QD)薄膜,它们分别是油酸(OA),丁胺(BA)和1,2-乙二硫醇(EDT),这对硅的排列和光伏性能产生了明显影响薄膜中的PbSe QD。透射电子显微镜显示,改变QD间间距的配体在薄膜小区域(300 x 300 nm)的局部区域中引起了PbSe QD堆积的显着变化:从OA封端的PbSe QD的超晶格到EDT封闭的PbSe QD的混沌模式。使用同步辐射X射线反射率探头和数据拟合,我们确定,相对于OA-OA而言,盖有BA和EDT的大面积(1.5 x 1.5 cm)PbSe QD薄膜的粗糙度降低,平均密度增加。加盖的PbSe QD薄膜。尤其是,对于掺入EDT配体的系统,对于电荷传输至关重要的PbSe QD的垂直堆积密度大大提高了。结果,与以OA或BA封顶的PbSe QD薄膜作为有源层的相应设备相比,包含EDT处理的PbSe QD薄膜作为有源层的设备显示出大大提高的功率转换效率(PCE)。通过采用逐层技术,我们制造了EDT封顶的PbSe QD器件,其PCE为2.45%。

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