METHOD FOR MANUFACTURING A QUANTUM DOT USING A DIELECTRIC THIN FILM AND A THERMAL PROCESS AND A SEMICONDUCTOR STRUCTURE INCLUDING THE QUANTUM DOT

摘要

PURPOSE: A method for manufacturing a quantum dot and a semiconductor structure including the quantum dot are provided to selectively grow the quantum dot according to the function of a device by controlling the size, density, and growth location of a dielectric thin film pattern.;CONSTITUTION: A compound semiconductor layer including a quantum well structure with a first barrier layer, a well layer, and a second barrier layer is prepared. The compound semiconductor layer is a III-V group compound semiconductor or II-V group compound semiconductor. A dielectric thin film pattern including a first dielectric thin film and a second dielectric thin film is formed on the second barrier layer. The first dielectric thin film includes a width of a nanometer. The compound semiconductor layer with the dielectric thin film pattern is thermally processed.;COPYRIGHT KIPO 2013