Selective Growth of Metallic and Semiconducting Single Walled Carbon Nanotubes on Textured Silicon

摘要

We fabricated the etched Si substrate having the pyramidal pattern size from 0.5 to 4.2 mu m by changing the texturing process parameters, i. e., KOH concentration, etching time, and temperature. Single walled carbon nanotubes (SWNTs) were then synthesized on the etched Si substrates with different pyramidal pattern by chemical vapor deposition. We investigated the optical and electronic properties of SWNT film grown on the etched Si substrates of different morphology by using scanning electron microscopy, Raman spectroscopy and conducting probe atomic force microscopy. We confirmed that the morphology of substrate strongly affected the selective growth of the SWNT film. Semiconducting SWNTs were formed on larger pyramidal sized Si wafer with higher ratio compared with SWNTs on smaller pyramidal sized Si.