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首页> 外文期刊>Journal of nanoscience and nanotechnology >Morphological Study of Poly(vinylbenzyl chloride)-Grafted Poly(ethylene-co-tetrafluoroethylene) [ETFE-g-PVBC] Films Using Small-Angle Neutron Scattering Analysis
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Morphological Study of Poly(vinylbenzyl chloride)-Grafted Poly(ethylene-co-tetrafluoroethylene) [ETFE-g-PVBC] Films Using Small-Angle Neutron Scattering Analysis

机译:聚(乙烯基苄基氯)接枝的聚(乙烯-共-四氟乙烯)[ETFE-g-PVBC]薄膜的形态学研究采用小角度中子散射分析

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In this study, the effect of degree of the grafting and crosslinking on the morphology of the crystalline domain in poly(vinylbenzyl chloride)-grafted poly(ethylene-co-tetrafluoroethylene) [ETFE-g-PVBC] films was investigated using a SANS (small-angle neutron scattering) analysis. The grafted films can be used as a precursor for ion-exchange membrane. ETFE-g-PVBC films with various degrees of cross-linking were prepared by a simultaneous irradiation grafting of vinylbenzyl chloride (VBC) and divinylbenzene (DVB) onto an ETFE film. The SEM-EDX (scanning electron microscopy-energy dispersive X-ray spectroscopy) results of a cross-sectional distribution of ETFE-g-PVBC films showed that the chlorine atoms were well-distributed throughout the films. SANS profiles of the PVBC-grafted films in the absence of a DVB crosslinker showed that the crystalline domain peaks were observed and the peak maximum position shifted significantly from 0.032 angstrom(-1) to 0.02 angstrom(-1) with an increase in the degree of grafting. However, peak maximum positions of the PVBC-grafted films in the presence of a DVB crosslinker shifted slightly from 0.02 angstrom(-1) to 0.024 angstrom(-1) with an increase in the amount of DVB monomer at same degree of grafting. These results indicate that the degree of grafting and crosslinking affect the morphology of the crystalline domain in the ETFE-g-PVBC films.
机译:在这项研究中,采用SANS(小角中子散射)分析。接枝膜可用作离子交换膜的前体。通过将乙烯基苄基氯(VBC)和二乙烯基苯(DVB)同时辐射接枝到ETFE膜上,可以制备具有各种交联度的ETFE-g-PVBC膜。 ETFE-g-PVBC薄膜的截面分布的SEM-EDX(扫描电子显微镜-能量色散X射线光谱)结果表明,氯原子在整个薄膜中分布良好。在没有DVB交联剂的情况下,PVBC接枝薄膜的SANS谱显示观察到了晶畴峰,并且随着程度的增加,峰的最大位置从0.032埃(-1)明显移至0.02埃(-1)。嫁接。但是,在相同的接枝度下,随着DVB单体含量的增加,在存在DVB交联剂的情况下,PVBC接枝的薄膜的最大最大位置从0.02埃(-1)轻微移至0.024埃(-1)。这些结果表明接枝和交联的程度影响ETFE-g-PVBC膜中的晶域的形态。

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