Resistive Switching Characteristics of Manganese Oxide Nanoparticle Assembly with Crossbar Arrays

摘要

The fabrication of 3 × 3 crossbar arrays measuring 20 μm in width was demonstrated. The bipolar resistive switching characteristics in manganese oxide nanoparticles were investigated in the crossbar structure of top electrode (Au)anoparticle assembly/bottom electrode (Ti) on SiO_2/Si substrate. The monodisperse manganese oxide nanoparticles measuring 13 nm in diameter were chemically synthesized by thermal decomposition of manganese acetate in the presence of oleic acid at high temperature. The nanoparticles were assembled as a layer measuring 30 nm thick by repeated dip-coating and annealing steps. The Auanoparticle assembly/Ti devices performed the bipolar behavior associated with the formation and sequential rupture of multiple conducting filaments in applying bias on Au electrode. When the voltage was swept from to + 5 V to the Au top electrode, the reset voltage was observed at ～ 4.4 V. As the applied voltage swept from 0 to - 5 V, the set voltage occurred at ～-1.8 V.