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首页> 外文期刊>Journal of nanoscience and nanotechnology >Reactions of Ni-B on Printed Ag Pattern by Using Nearly Neutral Electroless Bath
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Reactions of Ni-B on Printed Ag Pattern by Using Nearly Neutral Electroless Bath

机译:接近中性化学镀液对Ni-B在印刷Ag图案上的反应

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In this study, we investigated the characteristics of a nearly neutral Ni source solution including dimethylamine borane (DMAB) used to develop the metal PCB (printed circuit board) of high power LED (light-emitting diode) package. In accordance with the bath temperature ranging from 50℃ to 75℃, an electroless Ni-B plating on a screen-printed Ag pattern with an anodized Al substrate was carried out. The depositon rate of the electroless plated Ni-B film at bath temperature ranging from 50℃ to 75℃ was estimated by measurements of the thickness and the mass. The deposition rates by change of thickness and mass of the electroless plated Ni-B film at 50℃ were ~ 58 nm/min and 0.113 mg/min respectively. The activation energy obtained from slope of Arrhenius plot using these deposition rates was ~59 kJ/mol. Finally, selectively the film growth was achieved at all plating temperatures, without a damage of anodized Al substrate.
机译:在这项研究中,我们研究了包括二甲胺硼烷(DMAB)的近中性镍源溶液的特性,该溶液用于开发大功率LED(发光二极管)封装的金属PCB(印刷电路板)。根据浴温范围从50℃到75℃,在带有阳极氧化铝基板的丝网印刷Ag图案上进行了化学镀Ni-B。通过测量厚度和质量来估计在50℃至75℃的浴温下化学镀Ni-B膜的沉积速率。在50℃时,化学镀Ni-B薄膜的厚度和质量随厚度的变化分别达到约58nm / min和0.113mg / min。利用这些沉积速率从阿累尼乌斯曲线的斜率获得的活化能为〜59 kJ / mol。最后,在所有镀覆温度下选择性地实现了膜的生长,而不会损坏阳极氧化铝基材。

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