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Observation of Electrical Switching, Reverse Rectification and Hysteresis in Nanostructured Organic-Organic Heterojunction

机译:纳米结构有机-有机异质结的电开关,反向整流和磁滞现象的观察

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Nanostructured organic-organic (O-O) heterojunction was fabricated by using the thin films of a hole transporting material, copper phthalocyanine (CuPc) and an electron transporting material, copper hexadecafluoro-phthalocyanine (F_(16)CuPc). The nanostructured thin films were characterized by optical absorption spectra, FESEM, AFM, X-ray diffraction, etc. Grain size of CuPc and F_(16)CuPc on the substrate surface was different. XRD analysis shows that the crystallinity of the double layer films/heterojunction decreases as compared to the single layer film. The heterojunction sandwich structure ITO/F_(16)CuPc/CuPc/Al, in the present study has shown a good diode like current-voltage (I-V) characteristics with reverse rectifying characteristics. In addition, electrical switching and hysteresis phenomena have also been observed in both sides of the voltage polarities. Interestingly, the single layer sandwich structure of the type ITO/CuPc/Al and ITO/F_(16)CuPc/Al did not show any noticeable electrical switching and hysteresis in I-V characteristics as compared to double layer heterostructure. The reverse rectification has been explained on the basis of band bending due to the accumulation of charge carriers near the junction and the electrical switching has been explained considering the charge carriers trapping and detrapping at the O-O interface.
机译:使用空穴传输材料,铜酞菁(CuPc)和电子传输材料十六氟铜-酞菁铜(F_(16)CuPc)的薄膜制造了纳米结构的有机-有机(O-O)异质结。通过光学吸收光谱,FESEM,AFM,X射线衍射等对纳米结构薄膜进行了表征。在基底表面上CuPc和F_(16)CuPc的晶粒尺寸不同。 XRD分析表明,与单层膜相比,双层膜/异质结的结晶度降低。在本研究中,异质结夹层结构ITO / F_(16)CuPc / CuPc / Al显示了具有反向整流特性的良好二极管,如电流-电压(I-V)特性。另外,在电压极性的两侧也观察到电开关和磁滞现象。有趣的是,与双层异质结构相比,类型为ITO / CuPc / Al和ITO / F_(16)CuPc / Al的单层夹心结构在I-V特性中未显示任何明显的电开关和磁滞现象。已经基于由于结附近的电荷载流子的积累而引起的带弯曲来解释了反向整流,并且已经考虑了在O-O界面处俘获和释放的载流子来解释了电开关。

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