Synthesis of Superhydrophobic Silicon Oxide Nanowires Surface on Silicon Wafer

摘要

High roughness of several hundreds of nanometers and low free energy introduced the superhydrophobic surface with a high water contact angle of ～160° for the chemically modified silicon oxide nanowires on silicon wafer. Particularly, a very small rolling angle of <5° with the annealed sample was observed. The nano-structure with high roughness and organic perfluoroalkysilane coating with CF{sub}2/CF{sub}3 groups contributed the superhydrophobicity. The present superhydrophobic nanowires surface on silicon wafer suggests the potential applications in self-cleaning semiconductor devices such as radar surface, solar cell.