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首页> 外文期刊>Journal of Materials Science >Influence of sputtering pressure on the structure and ionic conductivity of thin film amorphous electrolyte
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Influence of sputtering pressure on the structure and ionic conductivity of thin film amorphous electrolyte

机译:溅射压力对薄膜非晶电解质结构和离子电导率的影响

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Ionic conducting thin film amorphous electrolytes are promising candidates for microelectronics applications. This study presents an investigation into the structure and composition of lithium phosphorus oxynitride (LiPON) thin film electrolyte prepared using radio frequency (RF) sputtering on Li _3PO_4 target. The ionic conductivity of LiPON thin films has been dramatically improved by decreasing N_2 pressure. X-ray photoelectron spectra (XPS) were used to determine the structure and composition of LiPON thin films. It was found that increasing the N_2 pressure during the deposition process resulted in a greatly decreased formation of triply coordinated -N<(N_t) as compared to doubly coordinated -N=(N_d) in LiPON thin films. These results indicate that the Nt structural unit plays an important role in the improvement of ionic conductivity as compared to the N_d structural unit. It also shows that PO_2N _2 tetrahedra with two N_t structural units exist in LiPON thin films at low N_2 pressures. Consequently, the improved ionic conductivity of the LiPON thin film deposited at low pressure results from the existence of PO_2N_2 tetrahedra with two Nt structural units in LiPON thin film. PO_2N_2 tetrahedra with two Nt structural units provides higher cross-linking density of the glass network and lower electrostatic energy than with two Nd structural units.
机译:离子导电薄膜非晶态电解质是微电子应用的有希望的候选者。这项研究提出了对在Li _3PO_4靶上使用射频(RF)溅射制备的氧氮化锂磷(LiPON)薄膜电解质的结构和组成的研究。通过降低N_2压力,LiPON薄膜的离子电导率得到了显着提高。 X射线光电子能谱(XPS)用于确定LiPON薄膜的结构和组成。已发现与LiPON薄膜中的双配位-N =(N_d)相比,在沉积过程中增加N_2压力导致三配位-N <(N_t)的形成大大减少。这些结果表明,与N_d结构单元相比,Nt结构单元在改善离子电导率中起重要作用。这也表明在低N_2压力下LiPON薄膜中存在具有两个N_t结构单元的PO_2N _2四面体。因此,由于在LiPON薄膜中存在具有两个Nt结构单元的PO_2N_2四面体,使得低压沉积的LiPON薄膜具有更高的离子电导率。与具有两个Nd结构单元相比,具有两个Nt结构单元的PO_2N_2四面体提供更高的玻璃网络交联密度和更低的静电能。

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