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Investigations on the structural, optical and electrical properties of Nb-doped SnO2 thin films

机译:掺Nb SnO2薄膜的结构,光学和电学性质研究

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Niobium-doped tin oxide thin films were deposited on glass substrates by the chemical spray pyrolysis method at a substrate temperature of 400 °C. Effects of Nb doping on the structural, electrical and optical properties have been investigated as a function of niobium concentration (0-2 at.%) in the spray solution. X-ray diffraction patterns showed that the films are polycrystalline in nature and the preferred growth direction of the undoped film shifts to (200) for Nb-doped films. Atomic force microscopy study shows that the surface morphology of these films vary when doping concentration varies. The negative sign of Hall coefficient confirmed the n-type conductivity. Resistivity of ~4.3 × 10-3Ω cm, carrier concentration of ~5 × 1019cm-3, mobility of ~25 cm2V -1s-1and an average optical transmittance of ~70% in the visible region (500-800 nm) were obtained for the film doped with 0.5 at.% niobium.
机译:通过化学喷雾热解法在400℃的基板温度下将掺杂铌的氧化锡薄膜沉积在玻璃基板上。已研究了Nb掺杂对结构,电学和光学性能的影响,该影响是喷雾溶液中铌浓度(0-2 at。%)的函数。 X射线衍射图表明,该膜本质上是多晶的,对于掺Nb的膜,未掺杂的膜的优选生长方向转变为(200)。原子力显微镜研究表明,当掺杂浓度变化时,这些膜的表面形态也会变化。霍尔系数的负号证实了n型电导率。在可见光区域(500-800 nm)获得的电阻率为〜4.3×10-3Ωcm,载流子浓度为〜5×1019cm-3,迁移率为〜25 cm2V -1s-1,平均光透射率为〜70%。薄膜中掺有0.5 at。%的铌。

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