ITO substrate resistivity effect on the properties of CuInSe_2 deposited using two-electrode system

摘要

The purpose of this work is to deposit the CuInSe_2 films on the ITO substrate by electrodeposition technique using a simplified two electrodes system and to investigate the effect of ITO sheet resistance on the fun_damental properties of the resulting films. The as deposited films were annealed under argon atmosphere at 300 °C during 30 min. The structural, morphological and electrical properties were characterized respectively by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrical resistivity measurements. The optical band gap of samples was estimated using the optical absorption technique. After annealing, the XRD spectra show diffraction peaks corresponding to the single-phase chalcopyrite CuInSe_2 with (112) as main reflection. The SEM images reveal a homogeneous surface and the esti_mated grain size was calculated from Schemer's Equation with (112) peak lay in the range of 165-272 A. The band gap, Eg, is a decreasing function with the ITO sheet resistance.