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首页> 外文期刊>Journal of Materials Science >Simultaneous measurement of normal force and electrical resistance during isothermal crystallization for carbon black filled high-density polyethylene
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Simultaneous measurement of normal force and electrical resistance during isothermal crystallization for carbon black filled high-density polyethylene

机译:炭黑填充高密度聚乙烯等温结晶过程中法向力和电阻的同时测量

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The kinetics of isothermal crystallization for high-density polyethylene (HDPE) containing different volume fraction (phi) of carbon black (CB) have been evaluated by using differential scanning calorimetry (DSC) at 123, 124, and 125 degrees C where the rate of crystallization is moderate. Simultaneous measurement of normal force (F-N) and electrical resistance (R) has been performed to probe the process of isothermal crystallization at strain zero. Results reveal that, at the early stage of crystallization, F-N is almost independent of time (t) while relative resistance (R/R-0) changes slightly with increasing time t. However, a significant increment in F-N and a remarkable change in R/R-0 can be observed at the same critical time (t(c)), and the value of t (c) is dependent on the crystallization temperature and CB content, which is available for describing the isothermal crystallization as a characteristic parameter. It is found that t (c) is greater than induction time of crystallization (t(0)) due to the less sensitivity of mechanical and electrical responses than enthalpy to the structural changes in the composites. It is suggested that mechanical and electrical simultaneous measurement endows us a novel approach to probing the formation of percolation network involving in crystallization of polymer matrix.
机译:通过使用差示扫描量热法(DSC)在123、124和125摄氏度下评估了包含不同体积分数(phi)的炭黑(CB)的高密度聚乙烯(HDPE)的等温结晶动力学。结晶适中。同时测量了法向力(F-N)和电阻(R),以探测零应变下的等温结晶过程。结果表明,在结晶初期,F-N几乎与时间(t)无关,而相对电阻(R / R-0)随时间t的增加而略有变化。但是,可以在同一临界时间(t(c))观察到FN的显着增加和R / R-0的显着变化,并且t(c)的值取决于结晶温度和CB含量,可用于将等温结晶描述为特征参数。发现t(c)大于结晶的诱导时间(t(0)),这是由于机械和电响应的敏感性比对复合材料的结构变化的焓低。建议机械和电气同时测量为我们提供了一种新颖的方法来探测涉及聚合物基质结晶的渗滤网络的形成。

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