beta-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity

摘要

In this work, ((2) over bar 01) oriented beta-Ga2O3 thin films have been grown on p-type silicon (100) substrates by laser molecular beam epitaxy. beta-Ga2O3/Si pen heterojunctions are formed as a deep ultraviolet ( UV) solar-blind photodetector. Those heterojunctions exhibit obvious rectifying characteristics and excellent solar-blind UV photoresponse. The responsivity reaches 370 A/W at 3 V reverse bias under 254 nm UV irradiation. The corresponding external quantum efficiency is over 1.8 x 10(5)%. The combination of wide bandgap semiconductor with silicon might open up possibilities for future generation deep UV solar-blind optoelectronic devices. (C) 2015 Elsevier B.V. All rights reserved.