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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Substrate-dependent ferroelectric and dielectric properties of Mn doped Na0.5Bi0.5TiO3 thin films derived by chemical solution decomposition
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Substrate-dependent ferroelectric and dielectric properties of Mn doped Na0.5Bi0.5TiO3 thin films derived by chemical solution decomposition

机译:化学溶液分解法制备的Mn掺杂的Na0.5Bi0.5TiO3薄膜的基体依赖性铁电和介电性能

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Na0.5Bi0.5(Ti0.98Mn0.02)O-3 (NBTMn) thin films have been fabricated on Pt/TiO2/SiO2/Si and LaNiO3 (LNO)/Si substrates via chemical solution decomposition. The microstructure, ferroelectric and dielectric properties were investigated. Both films on different substrates can be crystallized into the phase-pure perovskite structures. The NBTMn thin film deposited on Pt/TiO2/SiO2/Si substrate shows random orientation with (100) and (110) diffraction peaks, while the sample on LNO/Si exhibits preferred orientation with strong diffraction peaks of (100). The NBTMn thin film deposited on LNO/Si substrate exhibits a denser and smoother microstructure. Compared with the round shaped polarization-electric field hysteresis loops of NBTMn on Pt/TiO2/SiO2/Si substrate, the enhanced ferroelectric property can be observed in NBTMn thin film fabricated on LNO/Si with a remanent polarization (P-r) of 10.2 mu C/cm(2) due to the reduced leakage current. The dielectric tunabilities of two films increase gradually with the increasing of applied voltage, and the sample on LNO/Si substrate has a relatively larger dielectric tunability with 20% at 14 V and 1 MHz. (C) 2016 Elsevier B.V. All rights reserved.
机译:通过化学溶液分解,在Pt / TiO2 / SiO2 / Si和LaNiO3(LNO)/ Si衬底上制备了Na0.5Bi0.5(Ti0.98Mn0.02)O-3(NBTMn)薄膜。研究了微结构,铁电和介电性能。可以将位于不同基材上的两种薄膜结晶为纯相钙钛矿结构。沉积在Pt / TiO2 / SiO2 / Si衬底上的NBTMn薄膜表现出随机取向,具有(100)和(110)衍射峰,而LNO / Si上的样品表现出较好的取向,具有强的衍射峰(100)。沉积在LNO / Si衬底上的NBTMn薄膜呈现出更致密,更光滑的微观结构。与Pt / TiO2 / SiO2 / Si衬底上NBTMn的圆形极化电场滞后回线相比,在残留极化率(Pr)为10.2μC的LNO / Si上制造的NBTMn薄膜中,铁电性​​能得到了增强。 / cm(2),因为降低了泄漏电流。随着施加电压的增加,两层薄膜的介电常数逐渐增加,并且LNO / Si衬底上的样品具有相对较大的介电常数,在14 V和1 MHz时为20%。 (C)2016 Elsevier B.V.保留所有权利。

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