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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Energy separation and carrier-phonon scattering in CdZnTe/ZnTe quantum dots on Si substrate
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Energy separation and carrier-phonon scattering in CdZnTe/ZnTe quantum dots on Si substrate

机译:Si衬底上CdZnTe / ZnTe量子点中的能量分离和载子-声子散射

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We investigate the energy separation and carrier-phonon scattering in CdZnTe/ZnTe quantum dots on Si substrate. The quantum confinement results in an increase in acoustic phonon coupling and a reduction in optical phonon coupling. We describe the carrier dynamics behavior over the whole temperature using a model that includes discrete transitions and the escape of carriers in non-radiative processes. The energy separation between the discrete states is around 4.5 meV and the average energy of the optical phonons is about 18.5 meV. The slight increase in the decay time of the structure with increasing temperature is explained in terms of redistribution into multiple discrete levels. (C) 2015 Elsevier B.V. All rights reserved.
机译:我们研究了硅衬底上CdZnTe / ZnTe量子点中的能量分离和载子-声子散射。量子限制导致声子耦合和声子耦合减小。我们使用包括离散跃迁和非辐射过程中载流子逸出的模型来描述整个温度下的载流子动力学行为。离散状态之间的能量间隔约为4.5 meV,光子的平均能量约为18.5 meV。随着温度的升高,结构的衰减时间略有增加,这可以通过重新分配为多个离散级别来解释。 (C)2015 Elsevier B.V.保留所有权利。

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