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Structural properties of thermoelectric CoSb3 skutterudite thin films prepared by molecular beam deposition

机译:分子束沉积法制备热电CoSb3方钴矿薄膜的结构性能

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The research field of thermoelectricity was renewed by the progress made in nanostructuring approaches and by the investigation of new material groups as skutterudites, whose most promising representative is CoSb3. In this work Co-Sb thin films with a thickness of 30 nm were deposited by molecular beam deposition at different substrate temperatures as well as on non-heated substrates followed by a postannealing step. An extended investigation of the phase formation in dependence of deposition method and parameters, film composition, and post-treatment is given. The presented results provide different routes to achieve high quality single phase films. It was also demonstrated that the grain size of the CoSb3 thin films is very sensitive to the used deposition method and especially on the substrate temperature during deposition. A controllable grain size by changing the deposition parameters could be a key feature for the optimization of the thermoelectric properties, since especially the thermal conductivity should strongly depend on the grain size due to enhanced grain boundary scattering of phonons. (C) 2014 Elsevier B.V. All rights reserved.
机译:纳米结构方法的进展和对方钴矿等新材料组的研究更新了热电的研究领域,其中最有希望的代表是CoSb3。在这项工作中,通过分子束沉积在不同的衬底温度下以及在未加热的衬底上沉积30 nm厚的Co-Sb薄膜,然后进行后退火步骤。给出了根据沉积方法和参数,膜组成和后处理对相形成的扩展研究。提出的结果提供了获得高质量单相膜的不同途径。还证明了CoSb3薄膜的晶粒尺寸对所使用的沉积方法非常敏感,尤其是在沉积过程中对基板温度非常敏感。通过改变沉积参数可控制的晶粒尺寸可能是优化热电性能的关键特征,因为特别是由于声子的晶界散射增强,导热系数应很大程度上取决于晶粒尺寸。 (C)2014 Elsevier B.V.保留所有权利。

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