Nanocasting synthesis of ordered mesoporous indium tin oxide (ITO) materials with controllable particle size and high thermal stability

摘要

Ordered mesoporous indium tin oxide (ITO) materials were successfully synthesized by doping tin element into the nanocast-synthesized mesoporous In_2O_3 intermediate via a post-treatment process. The particle size can be systematically controlled by utilizing the "container effect" during the synthesis of mesoporous In_2O_3 intermediate. With the increase of Sn doping concentration, the electrical resistivity first decreases and then increases. The minimum resistivity value is 0.34 Ω cm for mesoporous ITO sample with 10 mol% of Sn doping concentration. We also discussed the effect of calcinations atmosphere and temperature on the crystallinity, mesoporous regularity and conducting properties in detail. The mesoporous ITO products prepared in this work possess high thermal stability up to 700 °C and may be used as excellent optoelectronic materials at elevated temperature without any detectable collapse in porosity.