首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >High sensitivity magnetic sensor consisting of ferromagnetic alloy, piezoelectric ceramic and high-permeability FeCuNbSiB
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High sensitivity magnetic sensor consisting of ferromagnetic alloy, piezoelectric ceramic and high-permeability FeCuNbSiB

机译:由铁磁合金,压电陶瓷和高磁导率FeCuNbSiB组成的高灵敏度磁传感器

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摘要

A high sensitivity magnetoelectric (ME) composite sensor employing a type of ferromagnetic constant-elasticity alloy (FeNi-FACE), piezoelectric Pb(Zr,Ti)O_3 (PZT-8H) and high-permeability FeCuNbSiB (Fe_(73.5)Cu_1Nb_3Si_(13.5)B_9) is developed. The FeCuNbSiB ribbon with the high permeability serves as the dynamic driver to increase the effective piezomagnetic coefficient d_(33) of the FeNi-FACE. At the same time, the FeCuNbSiB/FeNi-FACE/PZT-8H/FeNi-FACE/FeCuNbSiB (FeFPFFe) composite sensor exhibits a higher effective mechanical quality factor (Qm), which is ~7.7 times higher than that of Terfenol-D/PZT-8H/Terfenol-D (MPM) sensor. As the ME voltage at resonance is directly proportional to the product of piezomagnetic coefficient and Qm. a stronger ME effect can be achieved. The experimental results show that the resonance ME voltage coefficient (MEVC) of the FeFPFFe sensor at H_(dc) = 119 Oe achieves 4.367V/Oe, which is-1.41 times higher than that of FeNi-FACE/PZT-8H/FeNi-FACE (FPF) sensor. Furthermore, ?V_(ME)/?H_(dc) for the FeFPFFe sensor achieves ~22.5mV/Oe at H_(dc) = 31 Oe under resonant drive conditions of Hac = 0.1Oe, which is ~20 times higher than that of the previous reported Terfenol-D/Pb(Zr,Ti)O_3/Terfenol-D composite transducer. Thus the FeFPFFe sensor has highly sensitive ac or dc magnetic field sensing.
机译:一种高灵敏度磁电(ME)复合传感器,采用一种铁磁恒弹合金(FeNi-FACE),压电Pb(Zr,Ti)O_3(PZT-8H)和高磁导率FeCuNbSiB(Fe_(73.5)Cu_1Nb_3Si_(13.5 )B_9)已开发。具有高磁导率的FeCuNbSiB带用作动态驱动器,以增加FeNi-FACE的有效压电系数d_(33)。同时,FeCuNbSiB / FeNi-FACE / PZT-8H / FeNi-FACE / FeCuNbSiB(FeFPFFe)复合传感器表现出更高的有效机械品质因数(Qm),比Terfenol-D /高约7.7倍。 PZT-8H / Terfenol-D(MPM)传感器。由于谐振时的ME电压与压电系数和Qm的乘积成正比。可以实现更强的ME效果。实验结果表明,FeFPFFe传感器在H_(dc)= 119 Oe时的共振ME电压系数(MEVC)达到4.367V / Oe,是FeNi-FACE / PZT-8H / FeNi-的1.41倍脸部(FPF)传感器。此外,在Hac = 0.1Oe的谐振驱动条件下,FeFPFFe传感器的ΔV_(ME)/ΔH_(dc)在H_(dc)= 31 Oe时达到〜22.5mV / Oe,比Hac = 0.1Oe高约20倍。先前报道的Terfenol-D / Pb(Zr,Ti)O_3 / Terfenol-D复合换能器。因此,FeFPFFe传感器具有高度灵敏的交流或直流磁场感应。

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