Physical and dielectric properties of sol-gel derived ZnO-doped Zr_(0.8)Sn_(0.2)TiO_4 dielectric thin films

摘要

Electrical properties, optical properties and microstructures of 1 wt% ZnO-doped (Zr_(0.8)Sn_(0.2))TiO_4 thin films prepared by the sol-gel method on ITO substrates at different heat-treatment temperatures have been investigated. All films exhibited ZST (111) and (101) orientations perpendicular to the substrate surface and the grain size increased with increasing heat-treatment temperature. Optical transmittance spectroscopy further revealed high transparency (over 80%) in the visible region of the spectrum. At a heat-treatment temperature level of 250 °C, the ZnO-doped (Zr_(0.8)Sn_(0.2))TiO_4 films were found to possess a dielectric constant of 18 (at 1 MHz), a dissipation factor of 0.24 (at 1 MHz) and a leakage current density of 8.7 x 10~(-9) A/cm~2 at an electrical field of 50 V/cm.