Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition

摘要

Catalyst-free InP nanowires were grown on Si (1 0 0) substrates by metal organic chemical vapor deposition. In this method, in situ deposited In droplets are seeds of the InP nanowires growth. In order to control the growth of epitaxial InP nanowires, a detailed investigation on the growth related aspects such as the In droplets deposition time, growth temperature, and V/III ratio has been made. The experimental results indicate that the diameter, shape, and length of the nanowires can be controlled by growth conditions.