...
首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Theoretical investigation of the local lattice structure of Cr~(2+) ion at tetragonal sites in GaAs semiconductor
【24h】

Theoretical investigation of the local lattice structure of Cr~(2+) ion at tetragonal sites in GaAs semiconductor

机译:GaAs半导体四方位Cr〜(2+)离子局部晶格结构的理论研究

获取原文
获取原文并翻译 | 示例

摘要

An analyses of the relationship between the experimental zero-field splitting (ZFS) parameters D, a, F and the local lattice structure of Cr~(2+) ion located at tetragonal site in GaAs semiconductor is presented on the basis of the complete energy matrix for the d~4 configuration in a tetragonal ligand-field within strong-field representation. Our results show that there exists an expansion distortion in the local lattice structure. From our calculations, the distortion parameters DELTA R=0.045 A and DELTA theta=2.53° for GaAs:Cr~(2+) system are determined.
机译:在完全能量的基础上,分析了实验零场分裂参数(ZFS)D,a,F与GaAs半导体四方位Cr〜(2+)离子的局部晶格结构之间的关系。在强场表示的四方配体场中,d〜4构型的矩阵。我们的结果表明,局部晶格结构中存在膨胀变形。根据我们的计算,确定了GaAs:Cr〜(2+)系统的畸变参数DELTA R = 0.045 A和DELTA theta = 2.53°。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号