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首页> 外文期刊>Journal of Applied Polymer Science >Atomic oxygen erosion resistance of titania-polyimide hybrid films derived from titanium tetrabutoxide and polyamic acid
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Atomic oxygen erosion resistance of titania-polyimide hybrid films derived from titanium tetrabutoxide and polyamic acid

机译:四丁氧基钛和聚酰胺酸衍生的二氧化钛-聚酰亚胺杂化膜的耐原子氧侵蚀性

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摘要

A series of polyimide/titania (PI/TiO_2) hybrid films have been successfully synthesized based on titanium tetrabutoxide (Ti(OEt)_4), 3,3′,4,4′-bezonphenone tetracarboxylic dianhydride (BTDA), 4,4′-oxydianiline (ODA), and 1,3-bis(aminopropyl) tetramethyldisiloxane (APrTMOS) by a sol-gel process. The atomic oxygen (AO) exposure tests were carried out using a ground-based AO effects simulation facility. The chemical structure of PI/TiO_2 films was characterized by Fourier transform-infrared (FT-IR) spectroscope before and after AO exposure. The glass transition temperature (T_g) and mechanical properties were examined by dynamic mechanical analysis (DMA) and universal mechanical testing machine, respectively. The tensile strength and elongation of the hybrid film decreased with the increase of TiO_2 content, whereas the T_g increased with the increase of TiO_2 content. The effects of TiO _2 content on the morphology and structure evolvement of PI/TiO _2 hybrid films were also investigated using field emission scanning electron microscopy (FE-SEM) and X-ray photoelectron spectroscope (XPS), respectively. The results indicated that a TiO_2-rich layer resulting from the Ti(OEt)_4 formed on the PI film after AO exposure, which decreased the mass loss rate and obviously improved the AO resistance of PI films.
机译:基于四丁氧基钛(Ti(OEt)_4),3,3',4,4'-苯甲酮四羧酸二酐(BTDA),4,4'成功地合成了一系列聚酰亚胺/二氧化钛(PI / TiO_2)杂化膜溶胶-凝胶法制得-氧二苯胺(ODA)和1,3-双(氨基丙基)四甲基二硅氧烷(APrTMOS)使用基于地面的AO效果模拟设施进行了原子氧(AO)暴露测试。 PI / TiO_2薄膜的化学结构通过AO暴露前后的傅立叶变换红外(FT-IR)光谱仪进行表征。玻璃化转变温度(T_g)和力学性能分别通过动态力学分析(DMA)和通用力学试验机进行了检查。杂化膜的拉伸强度和伸长率随着TiO_2含量的增加而降低,而T_g随TiO_2含量的增加而增加。还分别使用场发射扫描电子显微镜(FE-SEM)和X射线光电子能谱仪(XPS)研究了TiO _2含量对PI / TiO _2杂化膜的形貌和结构演变的影响。结果表明,AO暴露后,在PI膜上形成的Ti(OEt)_4形成了富含TiO_2的层,降低了质量损失率,明显提高了PI膜的抗AO性能。

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