首页> 外文期刊>Journal of nanoscience and nanotechnology >Erosion Effects of Atomic Oxygen on Polyhedral Oligomeric Silsesquioxane-Polyimide Hybrid Films in Low Earth Orbit Space Environment
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Erosion Effects of Atomic Oxygen on Polyhedral Oligomeric Silsesquioxane-Polyimide Hybrid Films in Low Earth Orbit Space Environment

机译:低地球轨道空间环境中原子氧对多面体低聚倍半硅氧烷-聚酰亚胺杂化膜的冲蚀作用

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摘要

A novel polyimide (PI) hybrid nanocomposite containing polyhedral oligomeric silsesquioxane (POSS) had been prepared by copolymerization of trisilanolphenyl-POSS, 4,4'-oxydianiline (ODA), and pyromellitic dianhydride (PMDA). The AO resistance of these PI/POSS hybrid films was tested in the ground-based AO simulation facility. Exposed and unexposed surfaces were characterized by SEM and X-ray photoelectron spectroscopy. SEM images showed that the surface of the 20 wt% PI/POSS became much less rough than that of the pristine polyimide. Mass measurements of the samples showed that the erosion yield of the PI/POSS (20 wt.%) hybrid film was 1.2 × 10~(-25) cm~3/atom, and reduced to 4% of the polyimide film. The XPS data indicated that the carbon content of the near-surface region was decreased from 60.1 to 13.2 at% after AO exposure. The oxygen and silicon concentrations in the near-surface region increased to 1.96 after AO exposure. The nanometer-sized structure of POSS, with its large surface area, had led AO-irradiated samples to form a SiO_2 passivation layer, which protected the underlying polymer from further AO attack. The incorporation of POSS into the polyimide could dramatically improve the AO resistance of polyimide films in low earth orbit environment.
机译:通过三硅烷醇苯基-POSS,4,4'-氧二苯胺(ODA)和均苯四甲酸二酐(PMDA)的共聚反应,制备了一种包含多面体低聚倍半硅氧烷(POSS)的新型聚酰亚胺(PI)杂化纳米复合材料。这些PI / POSS混合薄膜的AO电阻在地面AO模拟设备中进行了测试。通过SEM和X射线光电子能谱表征暴露和未暴露的表面。 SEM图像显示,20wt%PI / POSS的表面变得比原始聚酰亚胺的表面粗糙得多。样品的质量测量表明,PI / POSS(20 wt。%)杂化膜的腐蚀产率为1.2×10〜(-25)cm〜3 /原子,降低到聚酰亚胺膜的4%。 XPS数据表明,暴露于AO后,近表面区域的碳含量从60.1降低到13.2 at%。暴露于AO后,近表面区域的氧和硅浓度增加到1.96。 POSS的纳米结构具有较大的表面积,已导致AO辐照的样品形成SiO_2钝化层,从而保护了下面的聚合物免受AO进一步的攻击。在低地球轨道环境中,将POSS掺入聚酰亚胺中可以显着提高聚酰亚胺薄膜的AO耐性。

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