Tokyo Ohka Unveils Photoresists for Double-patterning

摘要

Tokyo Ohka Kogyo has developed two positive photoresists for highly efficient double-exposure lithography for semiconductors at the 32_nanome-ter technology node and beyond.The Tokyo-based company's photoresist for the first exposure consists of a polymer grafted with a protective group that has high resistance to etching beams.Its second-exposure photoresist is made from a polymer that tightly adheres to the substrate to be etched and minimizes the leakage of etching beams between them.The solvent contained in the second photoresist also helps to prevent failures in the first patterning and the creation of minute line/space circuit patterns,the company says.