Indium-tris-guanidinates: a promising class of precursors for water assisted atomic layer deposition of In_2O_3 thin films

摘要

Two closely related mononuclear homoleptic indium-tris-guanidinate complexes have been synthesized and characterized as precursors for atomic layer deposition (ALD) of In_2O_3. In a water assisted ALD process, high quality In_2O_3 thin films have been fabricated for the first time using the new class of precursors as revealed by the promising ALD growth characteristics and film properties.