Growth of beta-Sic interlayers on WC-Co substrates with varying hydrogen/tetramethylsilane flow ratio for adhesion enhancement of diamond coatings

摘要

Cubic silicon carbide (beta-SiC) thin films were synthesized on cemented carbide (WC-Co) substrates as an interlayer for modifying the adhesion of diamond coatings. The influence of varying the hydrogen (H-2)/tetramethylsilane (TMS) flow ratios on the microstructure, phase composition and adhesion of the beta-SiC films was investigated. It was found that with the increase of the H-2/TMS flow ratios, the SiC crystallite size increases from 6.5 nm to 22.2 nm. When the flow ratio was 40:5, the film was formed of loose cauliflower-like agglomerates, containing SiC granular particles. With the flow ratio increased from 40:5 to 120:5, the films became more uniform and denser, resulting in adhesion enhancement. However, when the ratio increased from 160:5 to 200:5, clusters composed of faceted particles replaced the agglomerates, and the adhesion reduced. The beta-SiC film deposited with a H2/TMS flow ratio of 120:5 possessed a more uniform and denser structure, as well as better adhesion than the others. After subsequent diamond deposition, homogeneous nanocrystalline diamond coatings were realized on the beta-Sic interlayered substrates. Compared with the results on the well-known two-step chemically etched substrates, the diamond coatings deposited on the substrates with the beta-Sic interlayer possess excellent adhesion. It was also validated in this research that the beta-Sic interlayer deposited with a H2/TMS flow ratio of 120:5 was effective in enhancing the adhesion of diamond coatings prepared on WC-Co substrates. (C) 2015 Elsevier B.V. All rights reserved.