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首页> 外文期刊>Surface & Coatings Technology >Further improvements of nano-diamond structures on unheated substrates by optimization of parameters with secondary plasma in MW-PECVD
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Further improvements of nano-diamond structures on unheated substrates by optimization of parameters with secondary plasma in MW-PECVD

机译:通过MW-PECVD中次级等离子体的参数优化,进一步改善未加热基材上的纳米金刚石结构

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In order to provide a particular energy threshold for the required reactions to take place, formation of good quality nanocrystalline diamond (NCD) films generally needs high substrate temperature (typically similar to 700 degrees C), high H-2-dilution of the CHn precursors and elevated electrical power to the plasma. For low temperature deposition, high electrical power appears essential to sufficiently aggravate the dynamics of the precursors; however, the growing surface of the NCD film simultaneously gets damaged by the direct high energy ion collision. A buffering technique in the high power zone has been proposed to mitigate the surface damage by introducing secondary plasma in MW-PECVD, through a simple but tricky approach. The present investigation demonstrates how by proper and systematic optimization of the parametric conditions, including load matching through significant reduction in volume of the tubular reactor, core-shell like NCD structures of size in the range 5-14 nm with (111) crystallographic orientation in the core and similar to 85.4% sp(3) content in the overall network, have been grown on unheated substrates, at P = 500 W and p = 50 Torr, and at significantly low H-2 dilution of similar to 50% with CH4. In the course of further improvements at elevated MW power, P = 1000 W, and optimum H-2-dilution, NCD thin films with grains of diameter in the range 7-13 nm and prominent < 111 > and < 200 > crystalline diamond planes, along with the similar to 84.8% sp(3) content in the overall carbon network were obtained on unheated substrates, by pursuing it growth under secondary plasma of (CH4 + H-2) generated within stainless steel grid-like multiple mask assembly, while simultaneously protecting the surface from vigorous high energy ionic bombardments in MW-PECVD. To the best of our knowledge this exclusive method of synthesis of NCDs using secondary plasma has never been reported earlier, which may greatly enhance the understanding of the growth process and open up a new field of NCD synthesis with numerous application possibilities. (C) 2015 Elsevier B.V. All rights reserved.
机译:为了为发生所需的反应提供特定的能量阈值,形成高质量的纳米晶金刚石(NCD)膜通常需要较高的底物温度(通常类似于700摄氏度),CHn前体的高H-2-稀释度并提高了等离子体的电功率。对于低温沉积,高功率似乎对于充分加剧前驱体的动力学至关重要。然而,NCD膜的生长表面同时被直接的高能离子碰撞损坏。已经提出了在大功率区域中的缓冲技术,以通过简单但棘手的方法在MW-PECVD中引入次级等离子体来减轻表面损伤。本研究表明如何通过适当和系统地优化参数条件,包括通过显着减小管式反应器的体积进行负载匹配,核壳状NCD结构,其尺寸范围为5-14 nm,且具有(111)晶体取向。核心和整个网络中sp(3)含量约为85.4%,已在未加热的底物上生长,P = 500 W,p = 50 Torr,H-2稀释度很低,与CH4相似,约为50% 。在更高的功率(P = 1000 W)和最佳H-2稀释下的进一步改进过程中,NCD薄膜的晶粒直径在7-13 nm范围内,且突出的<111>和<200>晶状金刚石晶面,通过在不锈钢格栅状多重掩模组件中产生的(CH4 + H-2)二次等离子体下,通过在未加热的衬底上生长,在整个碳网络中获得了约84.8%的sp(3)含量,同时在MW-PECVD中保护表面免受高能离子轰击。据我们所知,这种使用次级等离子体合成NCD的独特方法从未被报道过,这可能极大地增进了人们对生长过程的理解,并开辟了NCD合成的新领域,具有许多应用可能性。 (C)2015 Elsevier B.V.保留所有权利。

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