Characteristics of N-doped TiO_2 thin films grown on unheated glass substrate by inductively coupled plasma assisted dc reactive magnetron sputtering

摘要

N-doped TiO_2 thin films have been deposited on unheated glass substrates by an inductively coupled plasma (ICP) assisted direct current (dc) reactive magnetron sputtering. All films were produced in the metallic mode of sputtering in order to achieve a high deposition rate. The structures and properties of the N-doped TiO_2 films were studied by X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, field emission scanning electron microscopy and UV-Vis spectro-photometer. Experimental results show that we can obtain well crystallized N-doped anatase phase TiO_2 thin films at low deposition temperature and at high deposition rate by using the ICP assisted dc reactive magnetron sputtering process. The doping of nitrogen into TiO_2 lattices leads to a smooth shift of the absorption band toward visible light regions.