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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Band-Emission Evolutions from Magic-sized Clusters to Nanosized Quantum Dots of Cd3As2 in the Hot-Bubbling Synthesis
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Band-Emission Evolutions from Magic-sized Clusters to Nanosized Quantum Dots of Cd3As2 in the Hot-Bubbling Synthesis

机译:热起泡合成中Cd3As2从魔术尺寸团簇到纳米尺寸量子点的能带发射演化。

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In this work, the band-emissions of both the magic-sized clusters (MSCs) and nanosized quantum dots (QDs) of cadmium arsenide (Cd3As2) are studied versus time during the hot-bubbling synthesis. The syntheses are performed by introducing the ex-situ produced H3As into the hot-surfactant solutions dissolved with cadmium oleate and ligand molecules. It is found that the MSCs are produced within 4.0 min because of the color change of the solution. However, these clusters are not stable, and the peak of the photoabsorption shifts from 528 to 540 nm with the growth time. Across a shallow energy barrier, the MSCs grow into nanosized quantum dots whose photoluminescence wavelengths are found to extend into the NIR region (lambda > 1480 nm) after a growth period of similar to 45.0 min. The quantum yield of the band emissions ranges 2.58.0% during the growth of Cd3As2 QDs. Analyses from the time-resolved fluorescence decay profiles suggest that the ultrafast exciton radiative decays are the dominant recombination in the Cd3As2 MSCs, and the lifetime is about 0.69 ns. Longer lifetime emissions (200300 ns) are found in the nanosized QDs, which is ascribed to the delocalized excitons in the lowest QD state after thermalization. This research highlights the origin and evolution of band-emissions in Cd3As2 QDs, which gives an in-depth understanding of the electronic structures of Cd3As2 QDs, and thus lending them wider potential applicability.
机译:在这项工作中,研究了热鼓泡合成过程中砷化镉(Cd3As2)的魔术大小簇(MSC)和纳米大小量子点(QD)的能带发射与时间的关系。通过将异位产生的H3A引入溶解有油酸镉和配体分子的热表面活性剂溶液中来进行合成。由于溶液的颜色变化,发现在4.0分钟内产生了MSC。然而,这些簇不稳定,并且光吸收的峰随着生长时间从528nm转变为540nm。穿过浅层能量屏障,MSC成长为纳米级量子点,其光致发光波长在经过约45.0分钟的生长期后会延伸到NIR区(λ> 1480 nm)。在Cd3As2量子点的生长过程中,带发射的量子产率范围为2.58.0%。从时间分辨的荧光衰变曲线分析表明,超快激子辐射衰变是Cd3As2 MSCs的主要重组,寿命约为0.69 ns。在纳米级量子点中发现更长的寿命发射(200300 ns),这归因于热化后处于最低量子点状态的离域激子。这项研究突出了Cd3As2量子点中带发射的起源和演化,从而深入了解了Cd3As2量子点的电子结构,从而为它们提供了更广泛的潜在适用性。

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