首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Hybrid-Functional Calculations on the Incorporation of Na and K Impurities into the CuInSe2 and Culn(5)Se(8) Solar-Cell Materials
【24h】

Hybrid-Functional Calculations on the Incorporation of Na and K Impurities into the CuInSe2 and Culn(5)Se(8) Solar-Cell Materials

机译:Na和K杂质掺入CuInSe2和Culn(5)Se(8)太阳能电池材料中的混合函数计算

获取原文
获取原文并翻译 | 示例
       

摘要

We have studied the energetics, atomic, and electronic structure of Na and K point defects, as well as the (Na-Na), (K-K), and (Na-K) dumbbells in CuInSe2 and CuIn5Se8 solar cell materials by hybrid functional calculations. We found that although Na and K behaves somewhat similar; there is a qualitative difference between the inclusion of Na and K impurities. Namely, Na will be mostly incorporated into CuInSe2 and CuIn5Se8 either as an interstitial defect coordinated by cations, or two Na impurities will form (Na-Na) dumbbells in the Cu sublattice. In contrast to Na, K impurities are less likely to form interstitial defects. Instead, it is more preferable to accommodate K either as K-Cu, substitutional defect, or to form (K-K) dumbbells on Cu substitution positions. Our data show that all (Na-Na), (Na-K), and (K-K) dumbbells can form in both CuInSe2 and CuIn5Se8. In the Cu-poor CuIn5Se8 material the pristine Cu vacancies act as the most stable sites where Na and K can be inserted. The formation energy of Na-related defects is generally lower than the corresponding K-related defects, which would mean that if a defect site is already occupied by Na, then it is less likely that K is able to substitute Na during the postdeposition treatment. Regarding the electronic structure of the materials, Na and K point defects located in the Cu sublattice do not create deep defect levels in the gap, so they are not detrimental for the solar cell. In contrast, Se-related substitutional defects introduce defect levels in the gap, which act as charge traps, leading to severe degradation of the device efficiency. However, the formation energy of these Se-related defects are high so that they should have a low concentration in the material.
机译:我们已经通过混合功能计算研究了CuInSe2和CuIn5Se8太阳能电池材料中Na和K点缺陷的能量学,原子和电子结构,以及(Na-Na),(KK)和(Na-K​​)哑铃。 。我们发现,尽管Na和K的行为有些相似; Na和K杂质的夹杂在质量上存在差异。即,Na将主要作为阳离子配位的间隙缺陷并入CuInSe2和CuIn5Se8中,或者在Cu亚晶格中会形成两个Na杂质(Na-Na)哑铃。与Na相比,K杂质不太可能形成间隙缺陷。取而代之的是,更优选地容纳K作为K-Cu,替代缺陷或在Cu替代位置上形成(K-K)哑铃。我们的数据显示,所有(Na-Na),(Na-K​​)和(K-K)哑铃均可在CuInSe2和CuIn5Se8中形成。在贫Cu的CuIn5Se8材料中,原始的Cu空位是可以插入Na和K的最稳定位点。与钠有关的缺陷的形成能通常低于相应的与钾有关的缺陷,这意味着如果缺陷部位已经被钠占据,那么在后处理过程中钾替代钠的可能性就较小。关于材料的电子结构,位于Cu亚晶格中的Na和K点缺陷不会在间隙中产生深缺陷水平,因此它们对太阳能电池无害。相反,与硒有关的替代缺陷在间隙中引入缺陷水平,该缺陷水平充当电荷陷阱,导致器件效率严重下降。然而,这些与硒有关的缺陷的形成能很高,因此它们在材料中的浓度应低。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号