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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Revisiting the Dependence of the Optical and Mobility Gaps of Hydrogenated Amorphous Silicon on Hydrogen Concentration
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Revisiting the Dependence of the Optical and Mobility Gaps of Hydrogenated Amorphous Silicon on Hydrogen Concentration

机译:回顾氢化非晶硅的光学和迁移率间隙对氢浓度的依赖性

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The optical absorption properties of hydrogenated amorphous silicon (a-Si:H) are important in solar applications and from the perspective of fundamental materials science. However, there has been a long-standing question from experiment of the dependence of the optical gap on the hydrogen content in a-Si:H. To reconcile this debate, we present density functional theory simulations of models of hydrogenated a-Si:H, with different hydrogen concentrations up to and including full hydrogen saturation. We discuss the dependence of the optical and mobility gaps in fully saturated and undersaturated a-Si:H. Oversaturation with hydrogen results in a dramatic change in the properties of a-Si:H and is beyond the scope of this paper. For undersaturated hydrogen contents, both gaps increase with increasing hydrogen concentration until hydrogen saturation is achieved. Our key finding is that at saturation the optical and mobility gaps converge to a value independent of the hydrogen content. Our analysis thus resolves the contradiction between experimental data examining the effect of hydrogen content up to saturation and interpretations based on conventional expectations regarding the hydrogen dependence of the optical and mobility gaps up to saturation, and it provides new insight into the materials properties of hydrogenated amorphous silicon that can be used for sample preparation.
机译:从基础材料科学的角度来看,氢化非晶硅(a-Si:H)的光吸收特性在太阳能应用中很重要。然而,从实验来看,光学间隙对a-Si:H中氢含量的依赖性存在长期存在的问题。为了调和这一争论,我们提出了氢化a-Si:H模型的密度泛函理论模拟,其中不同的氢浓度直至并包括完全氢饱和。我们讨论了在完全饱和和不饱和的a-Si:H中光学和迁移率间隙的依赖性。氢过饱和会导致a-Si:H的性质发生巨大变化,这超出了本文的范围。对于不饱和氢含量,两个间隙都随着氢浓度的增加而增加,直到达到氢饱和为止。我们的主要发现是,在饱和状态下,光学间隙和迁移率间隙收敛到一个与氢含量无关的值。因此,我们的分析解决了检验氢含量对饱和的影响的实验数据与基于关于光学对氢的依赖性以及对直至饱和的迁移率间隙的常规期望的解释之间的矛盾的矛盾,并且它为氢化非晶态的材料性能提供了新的见解。可用于样品制备的硅。

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